ASTM F1467-1999(2005) 半导体器件和微电路的电离辐射效应试验中X射线测试仪(近似等于10keV辐射量子)的使用标准指南
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【英文标准名称】:StandardGuideforUseofanX-RayTester([approximate]10keVPhotons)inIonizingRadiationEffectsTestingofSemiconductorDevicesandMicrocircuits
【原文标准名称】:半导体器件和微电路的电离辐射效应试验中X射线测试仪(近似等于10keV辐射量子)的使用标准指南
【标准号】:ASTMF1467-1999(2005)
【标准状态】:现行
【国别】:
【发布日期】:1999
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:微电子学;X射线仪;电子工程;试验设备
【英文主题词】:Collimator;Electricalconductors-semiconductors;Electronichardness;Experimentaldesign;Hardnesstests-radiation(ofsemiconductors);Ionizingradiation;Lowenergy([aprox]10keVphotons)X-raysources;Microcircuits;Microelectronicdevice
【摘要】:1.1ThisguidecoversrecommendedproceduresfortheuseofX-raytesters(thatis,sourceswithaphotonspectrumhaving[approximate]10keVmeanphotonenergyand[approximate]50keVmaximumenergy)intestingsemiconductordiscretedevicesandintegratedcircuitsforeffectsfromionizingradiation.1.2TheX-raytestermaybeappropriateforinvestigatingthesusceptibilityofwaferlevelordeliddedmicroelectronicdevicestoionizingradiationeffects.Itisnotappropriateforinvestigatingotherradiation-inducedeffectssuchassingle-eventeffects(SEE)oreffectsduetodisplacementdamage.1.3Thisguidefocusesonradiationeffectsinmetaloxidesilicon(MOS)circuitelements,eitherdesigned(asinMOStransistors)orparasitic(asinparasiticMOSelementsinbipolartransistors).1.4InformationisgivenaboutappropriatecomparisonofionizingradiationhardnessresultsobtainedwithanX-raytestertothoseresultsobtainedwithcobalt-60gammairradiation.Severaldifferencesinradiation-inducedeffectscausedbydifferencesinthephotonenergiesoftheX-rayandcobalt-60gammasourcesareevaluated.Quantitativeestimatesofthemagnitudeofthesedifferencesineffects,andotherfactorsthatshouldbeconsideredinsettinguptestprotocols,arepresented.1.5Ifa10-keVX-raytesteristobeusedforqualificationtestingorlotacceptancetesting,itisrecommendedthatsuchtestsbesupportedbycrosscheckingwithcobalt-60gammairradiations.1.6ComparisonsofionizingradiationhardnessresultsobtainedwithanX-raytesterwithresultsobtainedwithalinac,withprotons,etc.areoutsidethescopeofthisguide.1.7CurrentunderstandingofthedifferencesbetweenthephysicaleffectscausedbyX-rayandcobalt-60gammairradiationsisusedtoprovideanestimateoftheratio(number-of-holes-cobalt-60/(number-of-holes-X-ray).SeveralcasesaredefinedwherethedifferencesintheeffectscausedbyXraysandcobalt-60gammasareexpectedtobesmall.Othercaseswherethedifferencescouldpotentiallybeasgreatasafactoroffouraredescribed.1.8ItshouldberecognizedthatneitherX-raytestersnorcobalt-60gammasourceswillprovide,ingeneral,anaccuratesimulationofaspecifiedsystemradiationenvironment.Theuseofeithertestsourcewillrequireextrapolationtotheeffectstobeexpectedfromthespecifiedradiationenvironment.Inthisguide,wediscussthedifferencesbetweenX-raytesterandcobalt-60gammaeffects.Thisdiscussionshouldbeusefulasbackgroundtotheproblemofextrapolationtoeffectsexpectedfromadifferentradiationenvironment.However,theprocessofextrapolationtotheexpectedrealenvironmentistreatedelsewhere(1,2).1.9ThetimescaleofanX-rayirradiationandmeasurementmaybemuchdifferentthantheirradiationtimeintheexpecteddeviceapplication.Informationontime-dependenteffectsisgiven.1.10PossiblelateralspreadingofthecollimatedX-raybeambeyondthedesiredirradiatedregiononawaferisalsodiscussed.1.11Informationisgivenaboutrecommendedexperimentalmethodology,dosimetry,anddatainterpretation.1.12Radiationtestingofsemiconductordevicesmayproduceseveredegradationoftheelectricalparametersofirradiateddevicesandshouldthereforebeconsideredadestructivetest.1.13Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L04;N50
【国际标准分类号】:31_020
【页数】:18P.;A4
【正文语种】:
【原文标准名称】:半导体器件和微电路的电离辐射效应试验中X射线测试仪(近似等于10keV辐射量子)的使用标准指南
【标准号】:ASTMF1467-1999(2005)
【标准状态】:现行
【国别】:
【发布日期】:1999
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:微电子学;X射线仪;电子工程;试验设备
【英文主题词】:Collimator;Electricalconductors-semiconductors;Electronichardness;Experimentaldesign;Hardnesstests-radiation(ofsemiconductors);Ionizingradiation;Lowenergy([aprox]10keVphotons)X-raysources;Microcircuits;Microelectronicdevice
【摘要】:1.1ThisguidecoversrecommendedproceduresfortheuseofX-raytesters(thatis,sourceswithaphotonspectrumhaving[approximate]10keVmeanphotonenergyand[approximate]50keVmaximumenergy)intestingsemiconductordiscretedevicesandintegratedcircuitsforeffectsfromionizingradiation.1.2TheX-raytestermaybeappropriateforinvestigatingthesusceptibilityofwaferlevelordeliddedmicroelectronicdevicestoionizingradiationeffects.Itisnotappropriateforinvestigatingotherradiation-inducedeffectssuchassingle-eventeffects(SEE)oreffectsduetodisplacementdamage.1.3Thisguidefocusesonradiationeffectsinmetaloxidesilicon(MOS)circuitelements,eitherdesigned(asinMOStransistors)orparasitic(asinparasiticMOSelementsinbipolartransistors).1.4InformationisgivenaboutappropriatecomparisonofionizingradiationhardnessresultsobtainedwithanX-raytestertothoseresultsobtainedwithcobalt-60gammairradiation.Severaldifferencesinradiation-inducedeffectscausedbydifferencesinthephotonenergiesoftheX-rayandcobalt-60gammasourcesareevaluated.Quantitativeestimatesofthemagnitudeofthesedifferencesineffects,andotherfactorsthatshouldbeconsideredinsettinguptestprotocols,arepresented.1.5Ifa10-keVX-raytesteristobeusedforqualificationtestingorlotacceptancetesting,itisrecommendedthatsuchtestsbesupportedbycrosscheckingwithcobalt-60gammairradiations.1.6ComparisonsofionizingradiationhardnessresultsobtainedwithanX-raytesterwithresultsobtainedwithalinac,withprotons,etc.areoutsidethescopeofthisguide.1.7CurrentunderstandingofthedifferencesbetweenthephysicaleffectscausedbyX-rayandcobalt-60gammairradiationsisusedtoprovideanestimateoftheratio(number-of-holes-cobalt-60/(number-of-holes-X-ray).SeveralcasesaredefinedwherethedifferencesintheeffectscausedbyXraysandcobalt-60gammasareexpectedtobesmall.Othercaseswherethedifferencescouldpotentiallybeasgreatasafactoroffouraredescribed.1.8ItshouldberecognizedthatneitherX-raytestersnorcobalt-60gammasourceswillprovide,ingeneral,anaccuratesimulationofaspecifiedsystemradiationenvironment.Theuseofeithertestsourcewillrequireextrapolationtotheeffectstobeexpectedfromthespecifiedradiationenvironment.Inthisguide,wediscussthedifferencesbetweenX-raytesterandcobalt-60gammaeffects.Thisdiscussionshouldbeusefulasbackgroundtotheproblemofextrapolationtoeffectsexpectedfromadifferentradiationenvironment.However,theprocessofextrapolationtotheexpectedrealenvironmentistreatedelsewhere(1,2).1.9ThetimescaleofanX-rayirradiationandmeasurementmaybemuchdifferentthantheirradiationtimeintheexpecteddeviceapplication.Informationontime-dependenteffectsisgiven.1.10PossiblelateralspreadingofthecollimatedX-raybeambeyondthedesiredirradiatedregiononawaferisalsodiscussed.1.11Informationisgivenaboutrecommendedexperimentalmethodology,dosimetry,anddatainterpretation.1.12Radiationtestingofsemiconductordevicesmayproduceseveredegradationoftheelectricalparametersofirradiateddevicesandshouldthereforebeconsideredadestructivetest.1.13Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L04;N50
【国际标准分类号】:31_020
【页数】:18P.;A4
【正文语种】:
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